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Story : http://www.computerworld.com/s/article/9238339/Samsung_hits_high_gear_rolls_out_
Samsung Electronics announced today that it has begun mass producing a 128-gigabit (Gb), 3-bit multi-level-cell (MLC) NAND memory chip using sub-20 nanometer (nm)-class process technology.
The flash chip will be used to create Samsung's highest-density, single-layer memory for use in embedded NAND storage and solid state drives (SSDs).
Today, flash vendors are beginning to experiment with 3D or multi-layer flash for even denser products.
Most NAND flash today stores up to two bits of data per cell. Single-level cell (SLC) flash, which natively has higher endurance and performance than MLC flash, is more costly as it does not store data as densely. It's typically reserved for higher-end flash products.
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